ELECTRICAL ACTIVITY AND RADIATION DAMAGE IN ION IMPLANTED CADMIUM TELLURIDE.GETTINGS M; STEPHENS KG.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 22; NO 1; PP. 53-62; BIBL. 19 REF.Article

PROPERTIES AND APPLICATIONS OF ION-IMPLANTED FILMS.STEPHENS KG; WILSON IH.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 50; PP. 325-347; BIBL. 63 REF.Article

ION BEAM CO-ORDINATE MONITORSZAJNOWSKI WJ; HODGART MS; STEPHENS KG et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 17; PP. 674-675; BIBL. 4 REF.Article

LOW-ENERGY ION BEAMSWILSON IH ED; STEPHENS KG ED.1980; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1980; NO 54; 364 P.; BIBL. DISSEM.Conference Paper

VAPORISATION OF GAAS DURING LASER ANNEALINGBADAWI MH; SEALY BJ; STEPHENS KG et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 24; PP. 786-787; BIBL. 7 REF.Article

ELECTRICAL PROPERTIES OF LASER ANNEALED DONOR-IMPLANTED GAASSEALY BJ; KULAR SS; STEPHENS KG et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 22; PP. 720-721; BIBL. 5 REF.Article

CHANGES IN THE PHASE STRUCTURE AND FORMATION OF CHEMICAL COMPOUNDS BY ION IMPLANTATION OF TANTALUM THIN FILMSWILSON IH; GOH KH; STEPHENS KG et al.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 33; NO 2; PP. 205-218; BIBL. 12 REF.Article

RUTHERFORD BACK-SCATTERING AND ELLIPSOMETRY OF SELENIUM IMPLANTED INPGILL SS; SEALY BJ; STEPHENS KG et al.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 10; PP. 1915-1922; BIBL. 17 REF.Article

FAULT TREE ANALYSIS: AN EMERGING METHODOLOGY FOR INSTRUCTIONAL SCIENCEWOOD RK; STEPHENS KG; BARKER BO et al.1979; INSTRUCT. SCI.; NLD; DA. 1979; VOL. 8; NO 1; PP. 1-22; BIBL. 21 REF.Article

CARRIER REMOVAL PROFILES FROM OXYGEN IMPLANTED GAASGECIM S; SEALY RJ; STEPHENS KG et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 12; PP. 306-308; BIBL. 8 REF.Article

LOW-ENERGY ION BEAMS, 1977.STEPHENS KG; WILSON IH; MORUZZI JL et al.1978; INST. PHYS. CONF. SER., LONDON; GBR; DA. 1978; VOL. 38; 322 P.; BIBL. DISSEM.Conference Paper

ELECTRICAL PROFILES FROM ZINC IMPLANTED GAAS.KULAR SS; SEALY BJ; STEPHENS KG et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 1; PP. 2-4; BIBL. 6 REF.Article

CARRIER REMOVAL AFTER H₁⁺, H₂⁺ OR H₃⁺ IMPLANTS INTO GAAS.GECIM HC; SEALY BJ; STEPHENS KG et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 25; PP. 668-669Article

AN EFFECT OF POOR VACUUM CONDITIONS ON THE ANALYSIS OF THIN FILMS BY RUTHERFORD BACKSCATTERINGHEMMENT PLF; SINGLETON JF; STEPHENS KG et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 28; NO 1; PP. L1-L4; BIBL. 7 REF.Article

SURFACE ACCUMULATION OF ION-IMPLANTED TIN IN GAAS AFTER LASER ANNEALINGBADAWI MH; SEALY BJ; STEPHENS KG et al.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 3; PP. 507-513; BIBL. 5 REF.Article

THE EFFECT OF ION BOMBARDMENT ON THE STRAIN GAUGE FACTOR OF THIN GOLD FILMSROBINSON RGR; STEPHENS KG; WILSON IH et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 27; NO 2; PP. 251-262Article

PULSED LASER ANNEALING OF SELENIUM IMPLANTED INPGILL SS; TOPHAM PJ; SEALY BJ et al.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 12; PP. 2333-2339; H.T. 1; BIBL. 7 REF.Article

ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAASKULAR SS; SEALY BJ; STEPHENS KG et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 8; PP. 831-838; BIBL. 16 REF.Article

EFFECT OF SI₃N₄ ENCAPSULATION ON THE LASER-ANNEALING BEHAVIOUR OF GAASBADAWI MH; AKINTUNDE JA; SEALY BJ et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 15; PP. 447-448; BIBL. 5 REF.Article

LOW RESISTANCE OHMIC CONTACTS CONTAINING SB TO GAPITOH M; SUZUKI S; ITOH T et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 447-448; BIBL. 4 REF.Article

LASER ANNEALING OF CAPPED AND UNCAPPED GAASKULAR SS; SEALY BJ; BADAWI MH et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 14; PP. 413-414; BIBL. 5 REF.Article

EFFECT OF DUAL IMPLANTS INTO GAAS.AMBRIDGE T; HECKINGBOTTOM R; BELL EC et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 15; PP. 314-315; BIBL. 9 REF.Article